Vishay SQ P-Channel MOSFET, -20 A, -60 V P, 3-Pin TO-252 SQD19P06-60L_NE3
- RS-stocknr.:
- 878-892
- Fabrikantnummer:
- SQD19P06-60L_NE3
- Fabrikant:
- Vishay
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€ 0,82
(excl. BTW)
€ 0,99
(incl. BTW)
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- Verzending vanaf 12 februari 2027
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Rol(len) | Per rol |
|---|---|
| 1 + | € 0,82 |
*prijsindicatie
- RS-stocknr.:
- 878-892
- Fabrikantnummer:
- SQD19P06-60L_NE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -20A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | SQ | |
| Package Type | TO-252 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | P | |
| Forward Voltage Vf | -1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Width | 6.73mm | |
| Standards/Approvals | RoHS | |
| Length | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -20A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series SQ | ||
Package Type TO-252 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode P | ||
Forward Voltage Vf -1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Width 6.73mm | ||
Standards/Approvals RoHS | ||
Length 6.22mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- GB
The Vishay automotive Advanced P-Channel MOSFET designed for high performance in automotive applications, offering reliability and efficiency under extreme conditions.
Halogen-free and compliant with RoHS Directive 2002/95/EC
AEC-Q101 qualified for enhanced automotive reliability
Drain-Source Breakdown Voltage of -60 V for robust operation
Maximum continuous drain current of 20 A ensures effective power handling
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