STMicroelectronics Single FDmesh 1 N-Channel MOSFET, 51 A, 600 V Enhancement, 3-Pin TO-247 STW55NM60ND
- RS-stocknr.:
- 103-1993
- Fabrikantnummer:
- STW55NM60ND
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 103-1993
- Fabrikantnummer:
- STW55NM60ND
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Transistor Configuration | Single | |
| Series | FDmesh | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 51 A | |
| Maximum Drain Source Voltage (Vds) | 600 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Height | 20.15 mm | |
| Length | 15.75 mm | |
| Maximum Drain Source Resistance (Rds) | 60 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -25 V, +25 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 350 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 190 nC | |
| Width | 5.15 mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Transistor Configuration Single | ||
Series FDmesh | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 51 A | ||
Maximum Drain Source Voltage (Vds) 600 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Height 20.15 mm | ||
Length 15.75 mm | ||
Maximum Drain Source Resistance (Rds) 60 mΩ | ||
Maximum Gate Source Voltage (Vgs) -25 V, +25 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 350 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 190 nC | ||
Width 5.15 mm | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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