Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70 BSS816NWH6327XTSA1
- RS-stocknr.:
- 110-7113
- Fabrikantnummer:
- BSS816NWH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 300 eenheden)*
€ 18,90
(excl. BTW)
€ 22,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 32.700 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 300 + | € 0,063 | € 18,90 |
*prijsindicatie
- RS-stocknr.:
- 110-7113
- Fabrikantnummer:
- BSS816NWH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.8mm | |
| Width | 1.25 mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Operating Temperature 175°C | ||
Height 0.8mm | ||
Width 1.25 mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS™ 2 N-Channel MOSFET 20 V, 3-Pin SOT-323 BSS816NWH6327XTSA1
- Infineon OptiMOS™ 2 N-Channel MOSFET 30 V, 3-Pin SOT-23 BSS316NH6327XTSA1
- Infineon OptiMOS™ N-Channel MOSFET 20 V, 3-Pin SOT-323 BSS214NH6327XTSA1
- Infineon OptiMOS™ N-Channel MOSFET 20 V, 3-Pin SOT-323 BSS214NWH6327XTSA1
- Infineon OptiMOS™ N-Channel MOSFET BSC010N04LSATMA1
- Infineon OptiMOS™ Dual N/P-Channel-Channel MOSFET 1.5 A 6-Pin TSOP-6 BSL316CH6327XTSA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123NH6433XTMA1
