Infineon OptiMOS N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NH6327XTSA1

RS-stocknr.:: 165-5865
Fabrikantnummer:: BSS214NH6327XTSA1
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NH6327XTSA1

Subtotaal (3000 eenheden, op een rol van 3000)*

€ 315,00

(excl. BTW)

€ 381,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 03 maart 2027

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,105	€ 315,00

*prijsindicatie

RS-stocknr.:: 165-5865
Fabrikantnummer:: BSS214NH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	20V
	Series	OptiMOS
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	0.8nC
	Forward Voltage Vf	800mV
	Maximum Gate Source Voltage Vgs	-12V, +12V
	Maximum Power Dissipation Pd	500mW
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2mm
	Width	1.25mm
	Height	800μm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 20V
	Series OptiMOS
	Package Type SC-70
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 0.8nC
	Forward Voltage Vf 800mV
	Maximum Gate Source Voltage Vgs -12V, +12V
	Maximum Power Dissipation Pd 500mW
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2mm
	Width 1.25mm
	Height 800μm
	Automotive Standard AEC-Q101

Land van herkomst:: CN

Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS214NH6327XTSA1

This n-channel MOSFET is a compact surface-mount switch designed for low-voltage electronics and automotive applications. It operates as an enhancement-mode transistor to control current in power-management and signal-switching circuits while withstanding a wide temperature range suited to demanding environments.

Features and Benefits:

• Low drain-source resistance 250 mΩ reduces conduction losses
• Maximum drain current 1.5A supports moderate load currents
• Maximum drain-source voltage 20V enables low-voltage power stages
• Typical gate charge 0.8 nC allows faster switching transitions
• Maximum power dissipation 500 mW manages thermal loading in small footprints
• Maximum gate-source voltage 12V permits compatibility with common drive levels

Applications

• Suitable for DC-DC converter low-side switching
• Ideal for power distribution in automotive electronics
• Used with gate drivers requiring rapid switching response
• Can be used for load switching on compact PCBs
• Suitable for battery-powered device power management

What operating temperatures can it endure in harsh conditions?

It functions across a broad range from -55°C up to 150°C for high-temperature stability.

How does the package affect board population and assembly?

The SC-70 surface-mount package facilitates dense PCB layouts and automated pick-and-place assembly.

What electrical limit should designers observe for gate drive?

Do not exceed a gate-source voltage of 12V to avoid damaging the gate oxide.

How much vertical space should a designer allow for component clearance?

Allow for a component height of 0.8mm when planning enclosure and stacking constraints.