STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-220 STF35N60DM2
- RS-stocknr.:
- 111-6464
- Fabrikantnummer:
- STF35N60DM2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 6,24
(excl. BTW)
€ 7,56
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 234 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 3,12 | € 6,24 |
| 10 - 98 | € 3,04 | € 6,08 |
| 100 - 498 | € 2,96 | € 5,92 |
| 500 + | € 2,89 | € 5,78 |
*prijsindicatie
- RS-stocknr.:
- 111-6464
- Fabrikantnummer:
- STF35N60DM2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh DM2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 16.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh DM2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 16.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Gerelateerde Links
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin TO-220FP STF35N60DM2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin TO-247 STW35N60DM2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 650 V, 3-Pin TO-220FP STF28N60DM2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin D2PAK STB18N60DM2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin TO-247 STW70N60DM2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin TO-247 STW48N60DM2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin TO-247 STW56N60DM2
- STMicroelectronics MDmesh N-Channel MOSFET 600 V, 3-Pin TO-220FP STF10NM60N
