STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 111-6464P
- Fabrikantnummer:
- STF35N60DM2
- Fabrikant:
- STMicroelectronics
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€ 48,55
(excl. BTW)
€ 58,75
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 10 - 98 | € 4,855 |
| 100 - 498 | € 4,72 |
| 500 + | € 4,615 |
*prijsindicatie
- RS-stocknr.:
- 111-6464P
- Fabrikantnummer:
- STF35N60DM2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh DM2 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh DM2 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified