Renesas N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP RJK6012DPP-E0#T2
- RS-stocknr.:
- 121-6898
- Fabrikantnummer:
- RJK6012DPP-E0#T2
- Fabrikant:
- Renesas Electronics
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 121-6898
- Fabrikantnummer:
- RJK6012DPP-E0#T2
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 920 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +30 V | |
| Width | 4.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.16mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Height | 15.87mm | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 920 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +30 V | ||
Width 4.7mm | ||
Maximum Operating Temperature +150 °C | ||
Length 10.16mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Height 15.87mm | ||
- Land van herkomst:
- KR
N-Channel High Voltage MOSFETs 150V and Over, Renesas Electronics
MOSFET Transistors, Renesas Electronics (NEC)
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