onsemi P-Channel MOSFET, 47 A, 60 V, 3-Pin D2PAK FQB47P06TM-AM002
- RS-stocknr.:
- 124-1716
- Fabrikantnummer:
- FQB47P06TM-AM002
- Fabrikant:
- onsemi
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 124-1716
- Fabrikantnummer:
- FQB47P06TM-AM002
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 47 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 26 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 84 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 26 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 84 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.67mm | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- CN
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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