onsemi QFET Type P-Channel MOSFET, 47 A, 60 V Enhancement, 3-Pin TO-263 FQB47P06TM-AM002

RS-stocknr.:: 671-0905
Fabrikantnummer:: FQB47P06TM-AM002
Fabrikant:: onsemi

onsemi QFET Type P-Channel MOSFET, 47 A, 60 V Enhancement, 3-Pin TO-263 FQB47P06TM-AM002

Subtotaal (1 verpakking van 5 eenheden)*

€ 6,27

(excl. BTW)

€ 7,585

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Laatste voorraad RS

Laatste 2.110 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
5 +	€ 1,254	€ 6,27

*prijsindicatie

RS-stocknr.:: 671-0905
Fabrikantnummer:: FQB47P06TM-AM002
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	60V
	Series	QFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-4V
	Maximum Power Dissipation Pd	3.75W
	Typical Gate Charge Qg @ Vgs	84nC
	Maximum Operating Temperature	175°C
	Width	9.65mm
	Length	10.67mm
	Height	4.83mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 60V
	Series QFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -4V
	Maximum Power Dissipation Pd 3.75W
	Typical Gate Charge Qg @ Vgs 84nC
	Maximum Operating Temperature 175°C
	Width 9.65mm
	Length 10.67mm
	Height 4.83mm
	Standards/Approvals No
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.