onsemi NDT Type P-Channel MOSFET, 5 A, 30 V Enhancement, 4-Pin SOT-223
- RS-stocknr.:
- 124-1726
- Fabrikantnummer:
- NDT452AP
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 124-1726
- Fabrikantnummer:
- NDT452AP
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NDT | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.56 mm | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NDT | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.56 mm | ||
Height 1.6mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi P-Channel MOSFET 30 V, 3-Pin SOT-223 NDT452AP
- onsemi P-Channel MOSFET 30 V, 3-Pin SOT-223 NTF5P03T3G
- onsemi P-Channel MOSFET 30 V, 3-Pin SOT-223 NDT456P
- onsemi PowerTrench P-Channel MOSFET 30 V, 3-Pin SOT-223 FDT458P
- onsemi P-Channel MOSFET 20 V, 3-Pin SOT-223 NVF6P02T3G
- onsemi P-Channel MOSFET 60 V, 3-Pin SOT-223 NDT2955
- onsemi P-Channel MOSFET 60 V, 3-Pin SOT-223 NTF2955T1G
- onsemi P-Channel MOSFET 20 V, 3-Pin SOT-223 NTF6P02T3G
