onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223 NDT456P

RS-stocknr.:: 761-3971
Fabrikantnummer:: NDT456P
Fabrikant:: onsemi

onsemi NDT Type P-Channel MOSFET, 7.5 A, 30 V Enhancement, 4-Pin SOT-223 NDT456P

Subtotaal (1 verpakking van 5 eenheden)*

€ 8,93

(excl. BTW)

€ 10,805

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 40 stuk(s) vanaf 29 december 2025
Plus verzending 5.950 stuk(s) vanaf 05 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 +	€ 1,786	€ 8,93

*prijsindicatie

RS-stocknr.:: 761-3971
Fabrikantnummer:: NDT456P
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-223
	Series	NDT
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	54mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-65°C
	Typical Gate Charge Qg @ Vgs	47nC
	Maximum Power Dissipation Pd	3W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Height	1.7mm
	Width	3.7 mm
	Standards/Approvals	No
	Length	6.7mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-223
	Series NDT
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 54mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -65°C
	Typical Gate Charge Qg @ Vgs 47nC
	Maximum Power Dissipation Pd 3W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Height 1.7mm
	Width 3.7 mm
	Standards/Approvals No
	Length 6.7mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.