Infineon HEXFET Type N-Channel MOSFET, 83 A, 150 V Enhancement, 3-Pin TO-220 IRFB4228PBF

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€ 132,00

(excl. BTW)

€ 159,50

(incl. BTW)

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  • Plus verzending 800 stuk(s) vanaf 19 januari 2026
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RS-stocknr.:
124-9007
Fabrikantnummer:
IRFB4228PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

83A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

72nC

Maximum Operating Temperature

175°C

Height

8.77mm

Standards/Approvals

No

Width

4.82 mm

Length

1.3mm

Automotive Standard

No

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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