Infineon HEXFET Type N-Channel MOSFET, 85 A, 150 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 178-1416
- Fabrikantnummer:
- IRFB4321PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 80,05
(excl. BTW)
€ 96,85
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 1.000 stuk(s) vanaf 01 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,601 | € 80,05 |
| 100 - 200 | € 1,441 | € 72,05 |
| 250 + | € 1,379 | € 68,95 |
*prijsindicatie
- RS-stocknr.:
- 178-1416
- Fabrikantnummer:
- IRFB4321PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 350W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Height | 9.02mm | |
| Width | 4.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 350W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Height 9.02mm | ||
Width 4.82mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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