Infineon DirectFET, HEXFET Type N-Channel MOSFET, 86 A, 60 V Enhancement, 4-Pin MN IRF6648TRPBF
- RS-stocknr.:
- 130-0948
- Fabrikantnummer:
- IRF6648TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 5,47
(excl. BTW)
€ 6,618
(incl. BTW)
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- Plus verzending 4.240 stuk(s) vanaf 26 augustus 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,735 | € 5,47 |
| 20 - 48 | € 2,395 | € 4,79 |
| 50 - 98 | € 2,245 | € 4,49 |
| 100 - 198 | € 2,09 | € 4,18 |
| 200 + | € 1,925 | € 3,85 |
*prijsindicatie
- RS-stocknr.:
- 130-0948
- Fabrikantnummer:
- IRF6648TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | MN | |
| Series | DirectFET, HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.05mm | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Height | 0.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type MN | ||
Series DirectFET, HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.05mm | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Height 0.5mm | ||
Automotive Standard No | ||
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in Advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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