Infineon HEXFET Type N-Channel MOSFET, 24 A, 30 V Enhancement, 8-Pin SOIC IRF8788TRPBF

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€ 8,87

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RS-stocknr.:
130-0967
Fabrikantnummer:
IRF8788TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Height

1.5mm

Width

4 mm

Automotive Standard

No

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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