Infineon HEXFET Type N-Channel MOSFET, 7.3 A, 100 V Enhancement, 8-Pin SOIC

Bekijk alle MOSFETs

Subtotaal (1 rol van 4000 eenheden)*

€ 1.940,00

(excl. BTW)

€ 2.348,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 4.000 stuk(s) vanaf 20 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
4000 +€ 0,485€ 1.940,00

*prijsindicatie

RS-stocknr.:
165-5712
Fabrikantnummer:
IRF7495TRPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.3A

Maximum Drain Source Voltage Vds

100V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

1.5mm

Length

5mm

Width

4 mm

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
TH

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Gerelateerde Links