Infineon HEXFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 8-Pin PQFN IRFH5210TRPBF

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€ 9,355

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RS-stocknr.:
130-0977
Fabrikantnummer:
IRFH5210TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

100V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Maximum Operating Temperature

150°C

Height

0.9mm

Standards/Approvals

No

Width

6 mm

Length

5mm

Automotive Standard

No

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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