Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF
- RS-stocknr.:
- 130-1018
- Fabrikantnummer:
- IRLHS2242TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 25 eenheden)*
€ 6,325
(excl. BTW)
€ 7,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 26.725 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 + | € 0,253 | € 6,33 |
*prijsindicatie
- RS-stocknr.:
- 130-1018
- Fabrikantnummer:
- IRLHS2242TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 9.6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Width | 2.1 mm | |
| Length | 2.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-36-993 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 9.6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Width 2.1 mm | ||
Length 2.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-36-993 | ||
Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF
This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.
Features & Benefits
• Low Rds(on) ensures high efficiency and reduced heat generation
• Capable of handling continuous drain current of 7.2A for robust performance
• Compact 6-pin DFN package facilitates easy integration into limited spaces
• Enhancement mode operation allows for versatile design options
• Provides excellent thermal resistance for improved longevity
Applications
• Used for system/load switching in automation systems
• Ideal for charge and discharge switching in battery management
• Suitable for Compact electronic devices requiring high efficiency
• Employed in electrical control systems and power management circuits
What is the significance of the low Rds(on) feature?
The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is VITAL for high power applications.
How does this component manage thermal performance?
It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.
Can it handle varying operational environments?
Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.
Is it suitable for high-frequency applications?
The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.
What are the mounting requirements for optimal performance?
For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.
Gerelateerde Links
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin PQFN
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 7-Pin PQFN
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 7-Pin PQFN IRFHS9301TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PQFN IRFHM9331TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 4-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
