Texas Instruments NexFET Type P-Channel MOSFET, 104 A, 20 V Enhancement, 8-Pin VSON CSD25404Q3T
- RS-stocknr.:
- 133-0156
- Fabrikantnummer:
- CSD25404Q3T
- Fabrikant:
- Texas Instruments
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,10
(excl. BTW)
€ 9,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 120 stuk(s) vanaf 02 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 10 | € 1,62 | € 8,10 |
| 15 - 45 | € 1,296 | € 6,48 |
| 50 - 245 | € 1,136 | € 5,68 |
| 250 - 495 | € 0,988 | € 4,94 |
| 500 + | € 0,88 | € 4,40 |
*prijsindicatie
- RS-stocknr.:
- 133-0156
- Fabrikantnummer:
- CSD25404Q3T
- Fabrikant:
- Texas Instruments
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Texas Instruments | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | VSON | |
| Series | NexFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.8nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Texas Instruments | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type VSON | ||
Series NexFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.8nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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