DiodesZetex DMT Type N-Channel MOSFET, 68.8 A, 100 V Enhancement, 4-Pin TO-252 DMT10H010LK3-13
- RS-stocknr.:
- 133-3314
- Fabrikantnummer:
- DMT10H010LK3-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,39
(excl. BTW)
€ 8,94
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 240 | € 0,739 | € 7,39 |
| 250 + | € 0,633 | € 6,33 |
*prijsindicatie
- RS-stocknr.:
- 133-3314
- Fabrikantnummer:
- DMT10H010LK3-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53.7nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.58mm | |
| Width | 6.1 mm | |
| Height | 2.29mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53.7nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.58mm | ||
Width 6.1 mm | ||
Height 2.29mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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