Nexperia PMV45EN2 Type N-Channel MOSFET, 5.1 A, 30 V Enhancement, 3-Pin SOT-23 PMV45EN2R
- RS-stocknr.:
- 136-4835
- Fabrikantnummer:
- PMV45EN2R
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 14,20
(excl. BTW)
€ 17,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 63.000 stuk(s) vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 500 | € 0,142 | € 14,20 |
| 600 - 1400 | € 0,117 | € 11,70 |
| 1500 + | € 0,10 | € 10,00 |
*prijsindicatie
- RS-stocknr.:
- 136-4835
- Fabrikantnummer:
- PMV45EN2R
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PMV45EN2 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PMV45EN2 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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