Vishay SiHF620S Type N-Channel MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 145-1709
- Fabrikantnummer:
- SIHF620S-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 28,55
(excl. BTW)
€ 34,55
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,571 | € 28,55 |
| 100 - 200 | € 0,536 | € 26,80 |
| 250 - 450 | € 0,485 | € 24,25 |
| 500 - 1200 | € 0,456 | € 22,80 |
| 1250 + | € 0,428 | € 21,40 |
*prijsindicatie
- RS-stocknr.:
- 145-1709
- Fabrikantnummer:
- SIHF620S-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | SiHF620S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series SiHF620S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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