onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ
- RS-stocknr.:
- 145-5680
- Fabrikantnummer:
- FDG1024NZ
- Fabrikant:
- onsemi
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 145-5680
- Fabrikantnummer:
- FDG1024NZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | PowerTrench | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 259mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.25 mm | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series PowerTrench | ||
Mount Type Surface, Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 259mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.25 mm | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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