Infineon Single HEXFET 1 N-Channel MOSFET, 355 A, 75 V Enhancement, 3-Pin TO-247 IRFP7718PBF
- RS-stocknr.:
- 145-8890
- Fabrikantnummer:
- IRFP7718PBF
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 145-8890
- Fabrikantnummer:
- IRFP7718PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Transistor Configuration | Single | |
| Series | HEXFET | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 355 A | |
| Maximum Drain Source Voltage (Vds) | 75 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Height | 20.7 mm | |
| Length | 15.87 mm | |
| Maximum Drain Source Resistance (Rds) | 1.8 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 517 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | Lead-Free, RoHS | |
| Typical Gate Charge (Qg) @ Vgs | 552 nC | |
| Width | 5.31 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Transistor Configuration Single | ||
Series HEXFET | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 355 A | ||
Maximum Drain Source Voltage (Vds) 75 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Height 20.7 mm | ||
Length 15.87 mm | ||
Maximum Drain Source Resistance (Rds) 1.8 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 517 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals Lead-Free, RoHS | ||
Typical Gate Charge (Qg) @ Vgs 552 nC | ||
Width 5.31 mm | ||
- Land van herkomst:
- MX
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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