Infineon HEXFET Type N-Channel Power MOSFET, 355 A, 75 V Enhancement, 3-Pin TO-247 IRFP7718PBF

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Verpakkingsopties
RS-stocknr.:
879-3325
Fabrikantnummer:
IRFP7718PBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

355A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

517W

Typical Gate Charge Qg @ Vgs

552nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.87mm

Standards/Approvals

Lead-Free, RoHS

Height

20.7mm

Width

5.31 mm

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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