Infineon HEXFET N-Channel MOSFET, 24 A, 200 V, 3-Pin DPAK IRFR4620PBF

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RS-stocknr.:
145-9597
Fabrikantnummer:
IRFR4620PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

78 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Transistor Material

Si

Height

2.39mm

Minimum Operating Temperature

-55 °C

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