IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2
- RS-stocknr.:
- 146-4239
- Fabrikantnummer:
- IXFN150N65X2
- Fabrikant:
- IXYS
Subtotaal (1 tube van 10 eenheden)*
€ 457,31
(excl. BTW)
€ 553,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 10 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 10 + | € 45,731 | € 457,31 |
*prijsindicatie
- RS-stocknr.:
- 146-4239
- Fabrikantnummer:
- IXFN150N65X2
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-227 | |
| Series | HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 335nC | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Width | 25.07 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-227 | ||
Series HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 335nC | ||
Maximum Power Dissipation Pd 1.04kW | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Width 25.07 mm | ||
Automotive Standard No | ||
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
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