Vishay Single IRFP 1 N-Channel MOSFET, 23 A, 500 V Enhancement, 3-Pin TO-247AC IRFP23N50LPBF
- RS-stocknr.:
- 165-2831
- Fabrikantnummer:
- IRFP23N50LPBF
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 165-2831
- Fabrikantnummer:
- IRFP23N50LPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Transistor Configuration | Single | |
| Series | IRFP | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 23 A | |
| Maximum Drain Source Voltage (Vds) | 500 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247AC | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.5 V | |
| Height | 20.7 mm | |
| Length | 15.87 mm | |
| Maximum Drain Source Resistance (Rds) | 235 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -30 V, +30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 370 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 150 nC | |
| Width | 5.31 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Transistor Configuration Single | ||
Series IRFP | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 23 A | ||
Maximum Drain Source Voltage (Vds) 500 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247AC | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.5 V | ||
Height 20.7 mm | ||
Length 15.87 mm | ||
Maximum Drain Source Resistance (Rds) 235 mΩ | ||
Maximum Gate Source Voltage (Vgs) -30 V, +30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 370 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 150 nC | ||
Width 5.31 mm | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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