Infineon HEXFET N-Channel MOSFET, 7.3 A, 100 V Enhancement, 8-Pin SOIC IRF7495TRPBF
- RS-stocknr.:
- 827-3877
- Artikelnummer Distrelec:
- 304-44-453
- Fabrikantnummer:
- IRF7495TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 14,04
(excl. BTW)
€ 16,99
(incl. BTW)
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,404 | € 14,04 |
| 50 - 90 | € 1,334 | € 13,34 |
| 100 - 240 | € 1,278 | € 12,78 |
| 250 - 490 | € 1,194 | € 11,94 |
| 500 + | € 1,123 | € 11,23 |
*prijsindicatie
- RS-stocknr.:
- 827-3877
- Artikelnummer Distrelec:
- 304-44-453
- Fabrikantnummer:
- IRF7495TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Length 5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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