Infineon HEXFET Type N-Channel MOSFET, 43 A, 100 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 85,25

(excl. BTW)

€ 103,15

(incl. BTW)

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  • Plus verzending 200 stuk(s) vanaf 29 december 2025
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50 +€ 1,705€ 85,25

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RS-stocknr.:
165-5783
Fabrikantnummer:
IRFI4410ZPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

81nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

47W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.75mm

Standards/Approvals

No

Width

4.83 mm

Height

16.13mm

Automotive Standard

No

Land van herkomst:
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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