Infineon HEXFET Type N-Channel MOSFET, 43 A, 150 V Enhancement, 3-Pin TO-220 IRF3415PBF

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Verpakkingsopties
RS-stocknr.:
542-9232
Artikelnummer Distrelec:
303-41-275
Fabrikantnummer:
IRF3415PBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

42mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

200nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

200W

Maximum Operating Temperature

175°C

Width

4.69 mm

Height

8.77mm

Standards/Approvals

No

Length

10.54mm

Automotive Standard

No

Distrelec Product Id

30341275

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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