Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223

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RS-stocknr.:
165-5811
Fabrikantnummer:
BSP125H6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120mA

Maximum Drain Source Voltage Vds

600V

Series

SIPMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

45Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.4nC

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.5mm

Standards/Approvals

No

Length

6.5mm

Width

3.5 mm

Automotive Standard

AEC-Q101

Land van herkomst:
CN

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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