Infineon HEXFET Type N-Channel MOSFET, 161 A, 30 V Enhancement, 3-Pin TO-252

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RS-stocknr.:
165-5923
Fabrikantnummer:
IRLR7843TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

161A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Height

2.39mm

Automotive Standard

No

Land van herkomst:
CN

Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF


This MOSFET is tailored for high-performance applications in the electrical and electronics sectors, especially suitable for automotive and industrial needs. Its HEXFET technology ensures impressive efficiency and reliability, making it Ideal for high-frequency synchronous buck converters and isolated DC-DC converters. The device effectively manages power dissipation, enhancing the performance of electronic systems.

Features & Benefits


• Extremely low RDS(on) optimises power loss and efficiency

• High continuous drain current rating supports intensive applications

• Designed for high operating temperatures to ensure performance

• Lead-free construction meets environmentally conscious design standards

• Low gate charge improves switching behaviour in circuits

Applications


• Used in high-frequency synchronous buck converters

• Employed in isolated DC-DC converters for telecom systems

• Serves automotive power management systems

• Suitable for industrial power supplies requiring enhanced efficiency

• Ideal for power regulation in computer processors

What are the typical thermal performance characteristics?


The maximum operating temperature is +175°C with a thermal resistance of 50°C/W from junction to ambient, ensuring effective performance in thermal environments.

How does the low RDS(on) affect overall circuit design?


Low RDS(on) reduces conduction losses, leading to improved efficiency under varying load conditions, which is Crucial for high-performance designs.

Can it handle Pulse currents effectively?


Yes, it can accommodate pulsed drain currents of up to 620 A, ensuring operational reliability under dynamic loads.

What mounting methods are compatible with this component?


As a surface mount component in DPAK package, it is suitable for automated assembly processes.

Is it suitable for use in automotive applications?


Yes, its specifications, including a maximum drain-source voltage rating of 30V, make it fitting for automotive power systems.

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