Infineon HEXFET Type N-Channel MOSFET, 161 A, 30 V Enhancement, 3-Pin TO-252 IRLR7843TRPBF
- RS-stocknr.:
- 830-3382
- Fabrikantnummer:
- IRLR7843TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,43
(excl. BTW)
€ 6,57
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 60 stuk(s) klaar voor verzending
- 10 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 13.900 stuk(s) vanaf 08 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,543 | € 5,43 |
*prijsindicatie
- RS-stocknr.:
- 830-3382
- Fabrikantnummer:
- IRLR7843TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 161A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Distrelec Product Id | 304-37-849 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 161A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Distrelec Product Id 304-37-849 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF
This MOSFET is tailored for high-performance applications in the electrical and electronics sectors, especially suitable for automotive and industrial needs. Its HEXFET technology ensures impressive efficiency and reliability, making it Ideal for high-frequency synchronous buck converters and isolated DC-DC converters. The device effectively manages power dissipation, enhancing the performance of electronic systems.
Features & Benefits
• Extremely low RDS(on) optimises power loss and efficiency
• High continuous drain current rating supports intensive applications
• Designed for high operating temperatures to ensure performance
• Lead-free construction meets environmentally conscious design standards
• Low gate charge improves switching behaviour in circuits
Applications
• Used in high-frequency synchronous buck converters
• Employed in isolated DC-DC converters for telecom systems
• Serves automotive power management systems
• Suitable for industrial power supplies requiring enhanced efficiency
• Ideal for power regulation in computer processors
What are the typical thermal performance characteristics?
The maximum operating temperature is +175°C with a thermal resistance of 50°C/W from junction to ambient, ensuring effective performance in thermal environments.
How does the low RDS(on) affect overall circuit design?
Low RDS(on) reduces conduction losses, leading to improved efficiency under varying load conditions, which is Crucial for high-performance designs.
Can it handle Pulse currents effectively?
Yes, it can accommodate pulsed drain currents of up to 620 A, ensuring operational reliability under dynamic loads.
What mounting methods are compatible with this component?
As a surface mount component in DPAK package, it is suitable for automated assembly processes.
Is it suitable for use in automotive applications?
Yes, its specifications, including a maximum drain-source voltage rating of 30V, make it fitting for automotive power systems.
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRLR7843TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V DPAK IRLR8726TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V DPAK IRFR3910TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V DPAK AUIRFR8403TRL
- Infineon HEXFET N-Channel MOSFET 55 V DPAK IRLR3705ZTRPBF
- Infineon HEXFET N-Channel MOSFET 75 V DPAK IRFR3607TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V DPAK IRLR6225TRPBF
- Infineon HEXFET N-Channel MOSFET 100 A DPAK IRFR120NTRPBF
