Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC

Bekijk alle MOSFETs

Subtotaal (1 rol van 4000 eenheden)*

€ 1.316,00

(excl. BTW)

€ 1.592,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 14 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
4000 +€ 0,329€ 1.316,00

*prijsindicatie

RS-stocknr.:
165-5931
Fabrikantnummer:
IRF7303TRPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.9A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Height

1.5mm

Standards/Approvals

No

Width

4 mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF


This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for Compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

Features & Benefits


• Enhanced efficiency with a low Rds(on) of 80 mΩ

• High power dissipation capability with a maximum of 2W

• Dual-channel integration for increased functionality in designs

• Robust thermal operation up to +150°C for versatile applications

• Optimised for enhancement mode operation to improve energy management

• Compact SOIC package facilitates easy integration into modern PCBs

Applications


• Used in power supply circuits for voltage regulation

• Employed in motor control systems for efficient operation

• Suitable for lighting requiring robust switching

• Integrated into consumer electronics for improved power efficiency

• Ideal for automotive systems that require dependable performance

What is the maximum gate-source voltage for this device?


The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

How does the Rds(on) Value affect efficiency?


A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Can it operate at extreme temperatures?


Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

What type of circuit boards is this compatible with?


It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.

How should one approach the installation of this component?


Care should be taken to use appropriate soldering techniques to avoid heat damage and ensure a secure fit on the PCB.

Gerelateerde Links