Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC
- RS-stocknr.:
- 165-5940
- Fabrikantnummer:
- IRF7380TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 4000 eenheden)*
€ 1.352,00
(excl. BTW)
€ 1.636,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 0,338 | € 1.352,00 |
*prijsindicatie
- RS-stocknr.:
- 165-5940
- Fabrikantnummer:
- IRF7380TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7380TRPBF
This MOSFET is designed for efficient power management in various electronic applications. With a high voltage rating and a continuous drain current of 3.6A, it is suitable for high frequency DC-DC converters, ensuring reliable performance. Its Advanced design offers a practical solution for professionals in automation, electronics, and mechanical sectors seeking a versatile component for their circuits.
Features & Benefits
• Industry-standard SO-8 package ensures compatibility across different vendors
• Low Rds(on) of 73mΩ optimises efficiency in power applications
• Enhancement mode operation enhances performance characteristics
• Low gate charge of 15nC facilitates quicker switching speeds
• Maximum drain-source voltage of 80V accommodates high power needs
• RoHS compliant and halogen-free promotes environmental safety
Applications
• Used in high frequency DC-DC converters for power regulation
• Effective in battery management systems that require low power loss
• Suitable for motor controllers needing efficient switching performance
• Employed in power supply units to improve overall efficiency
• Appropriate for driving inductive loads like relays and solenoids
What are the implications of the maximum continuous drain current?
The maximum continuous drain current of 3.6A indicates its capability to manage higher currents in applications such as power supply circuits, ensuring stable operation without overheating.
How does the low Rds(on) affect performance?
The low Rds(on) of 73mΩ reduces power losses during operation, enhancing overall system efficiency, particularly beneficial in high frequency switching applications.
What is the significance of its temperature ratings?
Operating between -55°C and +150°C ensures the component can withstand harsh environmental conditions, making it suitable for industrial applications.
Can this component be directly mounted on PCBs?
Yes, its surface mount design allows for easy integration into PCB layouts, promoting efficient manufacturing processes and ensuring space-saving benefits in Compact designs.
How does the gate threshold voltage influence its operation?
With a gate threshold voltage ranging from 2V to 4V, it provides design flexibility, allowing compatibility with various control signals while ensuring effective device activation.
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