Vishay SiHF9Z14S Type P-Channel MOSFET, 4.7 A, 60 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 165-6090
- Fabrikantnummer:
- SIHF9Z14S-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 29,75
(excl. BTW)
€ 36,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,595 | € 29,75 |
| 100 - 200 | € 0,559 | € 27,95 |
| 250 - 450 | € 0,505 | € 25,25 |
| 500 - 1200 | € 0,476 | € 23,80 |
| 1250 + | € 0,446 | € 22,30 |
*prijsindicatie
- RS-stocknr.:
- 165-6090
- Fabrikantnummer:
- SIHF9Z14S-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SiHF9Z14S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | -5.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SiHF9Z14S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf -5.5V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay SiHF9Z14S Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SIHF9Z14S-GE3
- Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay SiHF9540S Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263