Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON

RS-stocknr.:: 165-6578
Fabrikantnummer:: BSC060P03NS3EGATMA1
Fabrikant:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON

Subtotaal (1 rol van 5000 eenheden)*

€ 2.035,00

(excl. BTW)

€ 2.460,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 13 september 2027

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Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,407	€ 2.035,00

*prijsindicatie

RS-stocknr.:: 165-6578
Fabrikantnummer:: BSC060P03NS3EGATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS P
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25V
	Typical Gate Charge Qg @ Vgs	61nC
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	150°C
	Length	6.35mm
	Standards/Approvals	No
	Width	5.35mm
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS P
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25V
	Typical Gate Charge Qg @ Vgs 61nC
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 150°C
	Length 6.35mm
	Standards/Approvals No
	Width 5.35mm
	Height 1.1mm
	Automotive Standard No

Land van herkomst:: CN

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC060P03NS3EGATMA1

This MOSFET is a power-switching transistor designed for high-current, low-voltage applications in surface-mount assemblies. It operates across a wide temperature range suitable for demanding environments and delivers substantial continuous current capability while maintaining compact packaging for low-profile board designs.

Features and Benefits:

• 100A continuous drain current enables sustained high-current switching
• 30V drain-source rating supports low-voltage power stages
• 9.6mΩ Rds(on) reduces conduction losses and heat generation
• 83W maximum power dissipation permits significant power handling
• 61nC typical gate charge allows controlled switching dynamics
• 25V gate-source limit secures gate drive headroom for robustness

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for DC motor drives requiring high current handling
• Used for point-of-load regulators in server and telecom equipment
• Can be used for battery management systems in energy storage
• Suitable for high-current load switches on compact PCBs

What thermal range can it tolerate during operation?

It is specified to function from -55°C up to 150°C, allowing use in environments with severe temperature variation.

Which package and mounting style does it use for PCB assembly?

The device is supplied in an 8-pin TDSON package designed for surface-mount placement and low-profile assemblies.

Is the channel type and operating mode suitable for common power topologies?

It employs a P-type channel in enhancement mode, appropriate for designs requiring a P-channel device with controlled conduction characteristics.

How compact is the component for tight board layouts?

The package height is 1.1mm and the footprint supports compact placement while maintaining high-current capability.