STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 10 A, 600 V, 3-Pin D2PAK STB10NK60ZT4

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RS-stocknr.:
165-7787
Fabrikantnummer:
STB10NK60ZT4
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

MDmesh, SuperMESH

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

9.35mm

Number of Elements per Chip

1

Length

10.4mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

50 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics



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