N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon IRF1010ZSTRLPBF

RS-stocknr.:: 165-8196
Fabrikantnummer:: IRF1010ZSTRLPBF
Fabrikant:: Infineon

N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon IRF1010ZSTRLPBF

Prijs Elk (op een haspel van 800)**

€ 0,446

(excl. BTW)

€ 0,54

(incl. BTW)

2400 op voorraad - levertijd is 4 werkdag(en).*

* Bezorgdata kunnen veranderen afhankelijk van de gekozen hoeveelheid en het bezorgadres.

GRATIS bezorging voor bestellingen vanaf € 75,00

Aantal stuks	Per stuk	Per rol**
800 +	€ 0,446	€ 356,80

**prijsindicatie

RS-stocknr.:: 165-8196
Fabrikantnummer:: IRF1010ZSTRLPBF
Fabrikant:: Infineon

Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF

This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.

Features & Benefits

• High continuous drain current of 94A supports substantial load applications
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for advanced electronic designs

Applications

• Utilised in power management and conversion systems
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion

What are the implications of the low on-resistance feature?

The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.

How does this MOSFET perform in high-temperature environments?

It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.

What type of mounting is required for this component?

This device is designed for surface mount applications, allowing compact layout and efficient thermal management on printed circuit boards.

Can it handle pulsed currents effectively?

Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.

What characteristics should I consider for circuit compatibility?

Ensure that the gate threshold voltage ranges from 2V to 4V to ensure proper switching behaviour within your circuit design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	94 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	63 nC @ 10 V
Length	10.67mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	11.3mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C
Height	4.83mm