STMicroelectronics STripFET F7 N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STH410N4F7-6AG

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RS-stocknr.:
166-0986
Fabrikantnummer:
STH410N4F7-6AG
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

40 V

Package Type

H2PAK

Series

STripFET F7

Mounting Type

Surface Mount

Pin Count

6 + Tab

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

365 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

141 nC @ 10 V

Length

8.9mm

Width

10.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Forward Diode Voltage

1.3V

Height

4.8mm

Minimum Operating Temperature

-55 °C

Land van herkomst:
CN

N-Channel STripFET™ F7 Series, STMicroelectronics


The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


MOSFET Transistors, STMicroelectronics

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