Fabrikantnummer

onsemi PowerTrench N-Channel MOSFET, 2.7 A, 100 V Enhancement, 3-Pin SOT-23 FDN8601

RS-stocknr.:: 166-1613
Fabrikantnummer:: FDN8601
Fabrikant:: onsemi

onsemi PowerTrench N-Channel MOSFET, 2.7 A, 100 V Enhancement, 3-Pin SOT-23 FDN8601

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RS-stocknr.:: 166-1613
Fabrikantnummer:: FDN8601
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	100V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	183mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	3nC
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	1.5W
	Maximum Operating Temperature	150°C
	Length	1.4mm
	Standards/Approvals	No
	Width	2.92mm
	Height	940μm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 100V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 183mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 3nC
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 1.5W
	Maximum Operating Temperature 150°C
	Length 1.4mm
	Standards/Approvals No
	Width 2.92mm
	Height 940μm
	Automotive Standard No

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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