Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	600 mA, 700 mA
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-363
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	442 mΩ, 700 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.3V
	Maximum Power Dissipation	300 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Typical Gate Charge @ Vgs	1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V
	Number of Elements per Chip	2
	Width	1.25mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Length	2mm
	Height	1mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 600 mA, 700 mA
	Maximum Drain Source Voltage 20 V
	Package Type SOT-363
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 442 mΩ, 700 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.3V
	Maximum Power Dissipation 300 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V
	Number of Elements per Chip 2
	Width 1.25mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Length 2mm
	Height 1mm
	Minimum Operating Temperature -55 °C

Automotive Dual N-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Dual N/P-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C

Automotive Dual N-Channel MOSFET, Fairchild Semiconductor

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