IXYS Type N-Channel MOSFET, 10 A, 1 kV Enhancement, 3-Pin ISOPLUS247

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Subtotaal (1 tube van 30 eenheden)*

€ 503,70

(excl. BTW)

€ 609,60

(incl. BTW)

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  • Plus verzending 30 stuk(s) vanaf 29 december 2025
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Aantal stuks
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Per tube*
30 +€ 16,79€ 503,70

*prijsindicatie

RS-stocknr.:
168-4707
Fabrikantnummer:
IXFR15N100Q3
Fabrikant:
IXYS
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Merk

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

1kV

Package Type

ISOPLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

64nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

400W

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

21.34mm

Standards/Approvals

No

Width

5.21 mm

Length

16.13mm

Automotive Standard

No

Land van herkomst:
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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