IXYS Type N-Channel MOSFET, 32 A, 1 kV Enhancement, 3-Pin PLUS247

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Subtotaal (1 tube van 30 eenheden)*

€ 748,86

(excl. BTW)

€ 906,12

(incl. BTW)

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  • Verzending vanaf 04 november 2026
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Aantal stuks
Per stuk
Per tube*
30 +€ 24,962€ 748,86

*prijsindicatie

RS-stocknr.:
168-4716
Fabrikantnummer:
IXFX32N100Q3
Fabrikant:
IXYS
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Merk

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

1kV

Package Type

PLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

195nC

Maximum Power Dissipation Pd

1.25kW

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.21 mm

Length

16.13mm

Height

21.34mm

Automotive Standard

No

Land van herkomst:
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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