N-Channel MOSFET, 349 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18536KTTT

RS-stocknr.:: 168-4939
Fabrikantnummer:: CSD18536KTTT
Fabrikant:: Texas Instruments

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Prijs Elk (in eentube van 50)

€ 3,713

(excl. BTW)

€ 4,493

(incl. BTW)

Aantal stuks	Per stuk	Per tube*
50 +	€ 3,713	€ 185,65

*prijsindicatie

RS-stocknr.:: 168-4939
Fabrikantnummer:: CSD18536KTTT
Fabrikant:: Texas Instruments

ESD Control Selection Guide V1

RS-stocknr.:: 168-4939
Fabrikantnummer:: CSD18536KTTT
Fabrikant:: Texas Instruments

ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	349 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Series	NexFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	11.33mm
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	230 nC @ 10 V
Height	4.83mm
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	349 A
Maximum Drain Source Voltage	60 V
Package Type	D2PAK (TO-263)
Series	NexFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	11.33mm
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	230 nC @ 10 V
Height	4.83mm
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 349 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18536KTTT

N-Channel NexFET™ Power MOSFET, Texas Instruments

N-Channel NexFET™ Power MOSFET, Texas Instruments