Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 168-6028
- Fabrikantnummer:
- IRLB8314PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 57,20
(excl. BTW)
€ 69,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 750 stuk(s) vanaf 31 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,144 | € 57,20 |
| 100 - 200 | € 0,893 | € 44,65 |
| 250 - 450 | € 0,858 | € 42,90 |
| 500 - 1200 | € 0,812 | € 40,60 |
| 1250 + | € 0,721 | € 36,05 |
*prijsindicatie
- RS-stocknr.:
- 168-6028
- Fabrikantnummer:
- IRLB8314PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Length 10.67mm | ||
Height 16.51mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-220 IRLB8314PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247 AUIRFP4568
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220