Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 222-4611
- Fabrikantnummer:
- AUIRFP4568
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 25 eenheden)*
€ 211,15
(excl. BTW)
€ 255,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 1.075 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 25 - 25 | € 8,446 | € 211,15 |
| 50 - 100 | € 8,024 | € 200,60 |
| 125 + | € 7,686 | € 192,15 |
*prijsindicatie
- RS-stocknr.:
- 222-4611
- Fabrikantnummer:
- AUIRFP4568
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 517W | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Height | 5.31mm | |
| Width | 20.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 517W | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Height 5.31mm | ||
Width 20.7 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
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