Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247

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Subtotaal (1 tube van 25 eenheden)*

€ 211,15

(excl. BTW)

€ 255,50

(incl. BTW)

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  • Plus verzending 1.075 stuk(s) vanaf 30 december 2025
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Per tube*
25 - 25€ 8,446€ 211,15
50 - 100€ 8,024€ 200,60
125 +€ 7,686€ 192,15

*prijsindicatie

RS-stocknr.:
222-4611
Fabrikantnummer:
AUIRFP4568
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

517W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

151nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

15.87mm

Height

5.31mm

Width

20.7 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

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