STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 400 mA, 600 V Enhancement, 3-Pin TO-92 STQ1HNK60R-AP
- RS-stocknr.:
- 168-6849
- Fabrikantnummer:
- STQ1HNK60R-AP
- Fabrikant:
- STMicroelectronics
Ontvang bulkkorting
Voeg 4000 meer toe om € 76,00 te besparen
Bekijk bulkkortingSubtotaal (1 rol van 2000 eenheden)*
€ 366,00
(excl. BTW)
€ 442,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 4.000 stuk(s) vanaf 09 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* | Bespaar |
|---|---|---|---|
| 2000 - 2000 | € 0,183 | € 366,00 | - |
| 4000 + | € 0,164 | € 328,00 | € 76,00 |
*prijsindicatie
- RS-stocknr.:
- 168-6849
- Fabrikantnummer:
- STQ1HNK60R-AP
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-92 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.94mm | |
| Standards/Approvals | No | |
| Height | 4.95mm | |
| Length | 4.95mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-92 | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 3.94mm | ||
Standards/Approvals No | ||
Height 4.95mm | ||
Length 4.95mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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