STMicroelectronics STripFET H7 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 168-6982
- Fabrikantnummer:
- STF100N10F7
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 81,10
(excl. BTW)
€ 98,15
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 850 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,622 | € 81,10 |
| 100 - 200 | € 1,492 | € 74,60 |
| 250 + | € 1,455 | € 72,75 |
*prijsindicatie
- RS-stocknr.:
- 168-6982
- Fabrikantnummer:
- STF100N10F7
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET H7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.4mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET H7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 16.4mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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